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BZX71B12 PDF预览

BZX71B12

更新时间: 2024-11-12 06:45:15
品牌 Logo 应用领域
平盛电子 - PFS 二极管
页数 文件大小 规格书
2页 152K
描述
Silicon Epitaxial Planar Z-Diodes

BZX71B12 数据手册

 浏览型号BZX71B12的Datasheet PDF文件第2页 
BZX55B...  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Low noise  
Very high stability  
Available with tighter tolerances  
V –tolerance ± 2%  
Z
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
l=4mm, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =100mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Web Site:  
WWW.PS-PFS.COM  

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