Datasheet > BZX62B5V1

BZX62B5V1

更新时间： 2024-11-12 06:45:15

品牌	Logo	应用领域
平盛电子 - PFS		二极管
页数	文件大小	规格书
2页	152K
描述
Silicon Epitaxial Planar Z-Diodes

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中文翻译

获取价格

数据手册

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BZX62B5V1 数据手册

BZX55B...

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Low noise

Very high stability

Available with tighter tolerances

V –tolerance ± 2%

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

l=4mm, T =25 C

Type

Symbol

Value

500

Unit

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

300

Unit

K/W

l=4mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =100mA

Type

Symbol Min

Typ Max Unit

1.5

Web Site:

WWW.PS-PFS.COM

中文翻译

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