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BZX584B8V2 PDF预览

BZX584B8V2

更新时间: 2024-11-13 02:57:27
品牌 Logo 应用领域
强茂 - PANJIT 测试光电二极管
页数 文件大小 规格书
5页 105K
描述
SURFACE MOUNT SILICON ZENER DIODES

BZX584B8V2 数据手册

 浏览型号BZX584B8V2的Datasheet PDF文件第2页浏览型号BZX584B8V2的Datasheet PDF文件第3页浏览型号BZX584B8V2的Datasheet PDF文件第4页浏览型号BZX584B8V2的Datasheet PDF文件第5页 
BZX584B5V1 SERIES  
SURFACE MOUNT SILICON ZENER DIODES  
POWER  
200 mWatts  
VOLTAGE  
5.1~8.2 Volts  
FEATURES  
• Planar Die construction  
0.050(1.25)  
0.045(1.15)  
• 200mW Power Dissipation  
0.014(0.35)  
0.009(0.25)  
• Ideally Suited for Automated Assembly Processes  
0.034(0.85)  
0.029(0.75)  
0.026(0.65)  
0.021(0.55)  
• Lead free in comply with EU RoHS 2011/65/EU directives  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
0.006(0.15)  
0.002(0.05)  
0.067(1.70)  
0.059(1.50)  
MECHANICAL DATA  
0.20 MIN.  
• Case: SOD-523, Molded Plastic  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx weight: 0.00005 ounces, 0.001 grams  
1
2
Cathode  
Anode  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Maximum Power Dissipation (Notes A) at 25OC  
Operating Junction and StorageTemperature Range  
Symbol  
Value  
Units  
mW  
OC  
200  
P
D
-55 to +150  
TJ  
ELECTRICALCHARACTERISTICS  
Max. Reverse  
Leakage Current  
@ V  
Nominal Zener Voltage  
Max. Zener Impedance  
Marking  
Code  
Part Number  
V
Z
@ I ZT  
Z
ZT @ I ZT  
ZZK @ I ZK  
I
R
R
Nom. V  
5.1  
Min. V  
5
Max. V  
5.2  
mA  
5
mA  
1
A  
V
2
BZX584B5V1  
BZX584B5V6  
BZX584B8V2  
60  
480  
2
W9  
WA  
WE  
5.6  
8.2  
5.49  
8.04  
5.71  
8.36  
40  
15  
5
5
400  
80  
1
1
1
2
5
0.7  
NOTES :  
A. Mounted on an FR4 PCB, single-sided copper, mini pad.  
October 29,2013-REV.01  
PAGE . 1  

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