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BZX55T12C PDF预览

BZX55T12C

更新时间: 2024-11-06 06:45:15
品牌 Logo 应用领域
商升特 - SEMTECH 二极管齐纳二极管局域网
页数 文件大小 规格书
4页 255K
描述
SILICON EPITAXIAL PLANAR ZENER DIODES

BZX55T12C 数据手册

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BZX55T Series  
SILICON EPITAXIAL PLANAR ZENER DIODES  
Max. 0.5  
Features  
Min. 27.5  
Max. 3.9  
Min. 27.5  
Max. 1.9  
• Very sharp reverse characteristic  
• Low reverse current level  
• Very high stability  
Black  
Cathode Band  
Black  
Part No.  
Black  
"ST" Brand  
XXX  
ST  
• Low noise  
• Available with tighter tolerances  
Glass Case DO-35  
Dimensions in mm  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Ptot  
Value  
Unit  
mW  
Power Dissipation  
500  
175  
O
C
Junction Temperature  
Tj  
O
C
Storage Temperature Range  
TS  
- 65 to + 175  
O
Maximum Thermal Resistance (Ta = 25 C)  
Parameter  
Symbol  
RthJA  
Max.  
300  
Unit  
K/W  
Thermal Resistance Junction to Ambient Air  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
VF  
Max.  
1.5  
Unit  
V
Forward Voltage  
at IF = 200 mA  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 21/06/2007  

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