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BZX55B33-TAP PDF预览

BZX55B33-TAP

更新时间: 2024-11-14 03:50:59
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
6页 53K
描述
Zener Diode, 33V V(Z), 2%, 0.5W,

BZX55B33-TAP 数据手册

 浏览型号BZX55B33-TAP的Datasheet PDF文件第2页浏览型号BZX55B33-TAP的Datasheet PDF文件第3页浏览型号BZX55B33-TAP的Datasheet PDF文件第4页浏览型号BZX55B33-TAP的Datasheet PDF文件第5页浏览型号BZX55B33-TAP的Datasheet PDF文件第6页 
BZX55B...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Low noise  
Very high stability  
Available with tighter tolerances  
V –tolerance ± 2%  
Z
94 9367  
Applications  
Voltage stabilization  
Order Instruction  
Type  
Ordering Code  
Remarks  
BZX55B2V4  
BZX55B2V4–TAP  
Ammopack  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
l=4 mm, T =25 C  
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4 mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =100mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85604  
Rev. A4, 12-Mar-01  
www.vishay.com  
1 (6)  

BZX55B33-TAP 替代型号

型号 品牌 替代类型 描述 数据表
BZX55F33-TAP VISHAY

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Zener Diode, 33V V(Z), 3%, 0.5W,

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