Datasheet > BZX4V3

BZX4V3

更新时间： 2024-01-02 14:14:17

品牌	Logo	应用领域
DIOTECH		稳压二极管
页数	文件大小	规格书
3页	1607K
描述
1.3W EPITAXIAL ZENER DIODE

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中文翻译

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数据手册

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BZX4V3 数据手册

BZX85C3V3 THRU BZX85C56

1.3W EPITAXIAL ZENER DIODE

FEATURES

• Low profile package

• Built-in strain relief

• Low inductance

DO-41(GLASS)

• High temperature soldering : 260°C /10 seconds at terminals

• Glass package has Underwriters Laboratory Flammability

Classification

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: Molded Glass DO-41G

• Terminals: Axial leads, solderable per MIL-STD-750,

Method 2026 guaranteed

• Polarity: Color band denotes positive end

• Mounting position:Any

• Weight: 0.012 ounce, 0.336 gram

All Dimensions in mm

ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃)

Symbols

Value

Units

Zener current see table "Characteristics"

Power dissipation at TA=50℃

Junction temperature

1.3 1)

175

Ptot

℃

-65 to +200

Storage temperature range

TSTG

1)Valid provided that a distance of 8mm from case are kept at ambient temperature

ELECTRCAL CHARACTERISTICS(TA=25℃)

Symbols

RthA

Min

Typ

Max

170 1)

1.2

Units

℃/W

Thermal resistance junction to ambient

Forward voltage at IF=200mA

1) Valid provided that a distance at 8mm from case are kept at ambient temperature

12 3

中文翻译

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