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BZW50-15BRL PDF预览

BZW50-15BRL

更新时间: 2024-11-04 12:59:39
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意法半导体 - STMICROELECTRONICS /
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BZW50-15BRL 数据手册

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BZW50-10,B/180,B  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 5000 W (10/1000µs)  
STAND-OFF VOLTAGERANGE :  
From 10V to 180V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
AG  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particularly  
suited to protect voltage sensitive devices such  
as MOS Technology and low voltage supplied  
IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peakpulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
5000  
6.5  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
W
IFSM  
Non repetitive surge peak forward current  
for unidirectionaltypes  
tp = 10ms  
Tj initial = Tamb  
500  
A
Tstg  
Tj  
Storagetemperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperaturefor soldering during 10s at 5mm  
from case  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
15  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit. Llead = 10 mm  
Rth (j-a)  
65  
January 1998 Ed : 2  
1/5  

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