BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
TransZorb® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
DO-204AL (DO-41)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
VWM
5.8 V to 376 V
PPPM
400 W
1.5 W
40 A
PD
IFSM (uni-directional only)
MECHANICAL DATA
TJ max.
175 °C
Case: DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use suffix (e.g.
BZW04P-6V4B).
Electrical characteristics apply in both directions.
B
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
BZW04-213(B) ~ BZW04-376(B) for commercial grade only
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unles otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
PPPM
400
W
See next
table
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
PD
IFSM
1.5
40
W
A
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)
Operating junction and storage temperature range
VF
3.5/5.0
- 55 to + 175
V
TJ, TSTG
°C
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above
Revision: 12-Jul-11
Document Number: 88316
1
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