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BZW06-85 PDF预览

BZW06-85

更新时间: 2024-11-26 00:00:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管局域网
页数 文件大小 规格书
7页 126K
描述
TRANSIL

BZW06-85 数据手册

 浏览型号BZW06-85的Datasheet PDF文件第2页浏览型号BZW06-85的Datasheet PDF文件第3页浏览型号BZW06-85的Datasheet PDF文件第4页浏览型号BZW06-85的Datasheet PDF文件第5页浏览型号BZW06-85的Datasheet PDF文件第6页浏览型号BZW06-85的Datasheet PDF文件第7页 
BZW06-5V8/376  
BZW06-5V8B/376B  
®
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
STAND-OFF VOLTAGE RANGE :  
From 5.8V to 376 V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
DO-15  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
600  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
1.7  
W
IFSM  
Non repetitive surge peak forward current  
for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
100  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10s a 5mm  
from case.  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit.  
Rth (j-a)  
Llead = 10 mm  
100  
February 2003 - Ed : 3A  
1/6  

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