BZW04P7V0

更新时间： 2024-11-03 22:16:31

品牌	Logo	应用领域
威世 - VISHAY		瞬态抑制器二极管
页数	文件大小	规格书
4页	58K
描述
TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BZW04P7V0 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	击穿电压标称值：	8.2 V
最大钳位电压：	12.1 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e0	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	7 V	子类别：	Transient Suppressors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BZW04P7V0 数据手册

BZW04P-5V8 THRU BZW04-376

TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage - 5.8 to 376 Volts

Peak Pulse Power - 400 Watts

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction

♦ 400W peak pulse power

DO204AL

capability with a 10/1000µs waveform,

repetition rate (duty cycle): 0.01%

♦ Excellent clamping

capability

♦ Low incremental surge resistance

♦ Fast response time: typically less

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

than 1.0 ps from 0 Volts to V

for uni-

(BR)

directional and 5.0ns for bi-directional types

♦ Typical I less than 1µA above 10V rating

♦ High temperature soldering guaranteed:

265°C/10 seconds, 0.375" (9.5mm) lead length,

5lbs. (2.3 kg) tension

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

MECHANICAL DATA

Case: JEDEC DO-204AL molded plastic over passivated

junction

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix "E" part numbers

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: For unidirectional types the color band denotes

the cathode, which is postitive with respect to the anode

under normal TVS operation

Dimensions are in inches

and

(millimeters)

Mounting Position: Any

Weight: 0.012 ounce, 0.3 gram

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use add suffix Letter "B" (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNITS

Peak pulse power dissipation with a 10/1000µs waveform

(NOTE 1, FIG. 1)

P_PPM

Minimum 400

Watts

Peak pulse current with a 10/1000µs waveform

(NOTE 1)

I_PPM

Amps

Watts

SEE TABLE 1

Steady state power dissipation at T_L=75°C

lead lengths, 0.375” (9.5mm) _{(NOTE 2)}

P_M(AV)

1.0

Peak forward surge current, 8.3ms single half

Sine-wave superimposed on rated load

(JEDEC Method) _{(NOTE 3)}unidirectional only

I_FSM

40.0

Amps

Maximum instantaneous forward voltage at 25A

_{(NOTE 4)}uni-directional only

V_F

3.5/5.0

Volts

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +175

NOTES:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A=25°C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

(3) 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5V max. for devices of V_(BR)≤220V and V_F=5.0 Volt max. for devices of V_(BR)>220V

1/5/98

12 3 4

中文翻译

下载PDF

BZW04P7V0 替代型号

型号	品牌	替代类型	描述	数据表
P4KE8.2A-E3/73	VISHAY	功能相似	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41,
P4KE8.2A-B	LITTELFUSE	功能相似	Transient Voltage Suppression Diodes
P4KE8.2A	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors

与BZW04P7V0相关器件

型号	品牌	获取价格	描述	数据表
BZW04P7V0/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 7.02V V(RWM), Unidirectional,
BZW04P7V0/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 7.02V V(RWM), Unidirectional,
BZW04P7V0/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P7V0/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO

与BZW04P7V0相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P7V0

BZW04P7V0 技术参数

BZW04P7V0 数据手册

BZW04P7V0 替代型号

与BZW04P7V0相关器件

与BZW04P7V0相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P7V0

BZW04P7V0 技术参数

BZW04P7V0 数据手册

BZW04P7V0 替代型号

与BZW04P7V0相关器件

与BZW04P7V0相关文章

您还可以找

您在本页遇到什么问题？