品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 电视 | |
页数 | 文件大小 | 规格书 |
1页 | 68K | |
描述 | ||
400W, UNIDIRECTIONAL, SILICON, TVS DIODE |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | O-PALF-W2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.31 | 其他特性: | UL RECOGNIZED |
最大击穿电压: | 39.6 V | 最小击穿电压: | 34.2 V |
击穿电压标称值: | 36 V | 外壳连接: | ISOLATED |
最大钳位电压: | 64.3 V | 配置: | SINGLE |
最小二极管电容: | 480 pF | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
最大非重复峰值反向功率耗散: | 400 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1.7 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 31 V | 最大反向电流: | 5 µA |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BZW04P31/100 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/4E | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/4F | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/4G | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/4H | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/51 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 30.8V V(RWM), Unidirectional, | |
BZW04P31/53 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/54 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 30.8V V(RWM), Unidirectional, | |
BZW04P31/56 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
BZW04P31/58 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO |