Datasheet > BZW04P13BHE3/54

BZW04P13BHE3/54

更新时间： 2024-11-13 03:40:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	387K
描述
Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BZW04P13BHE3/54 数据手册

BZW04P-5V8 thru BZW04-376

www.vishay.com

Vishay General Semiconductor

TransZorb^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 400 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

DO-204AL (DO-41)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial and telecommunication.

V_WM

5.8 V to 376 V

P_PPM

400 W

1.5 W

40 A

P_D

I_FSM(uni-directional only)

MECHANICAL DATA

T_Jmax.

175 °C

Case: DO-204AL, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use suffix (e.g.

BZW04P-6V4B).

Electrical characteristics apply in both directions.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Note

BZW04-213(B) ~ BZW04-376(B) for commercial grade only

Polarity: For uni-directional types the color band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T_A= 25 °C unles otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾(fig. 1)

P_PPM

400

See next

table

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

I_PPM

Power dissipation on infinite heatsink at T_L= 75 °C (fig. 5)

P_D

I_FSM

1.5

Peak forward surge current, 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

V_F

3.5/5.0

- 55 to + 175

T_J, T_STG

°C

Notes

(1)

(2)

(3)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

V_F= 3.5 V for BZW04P(-)188 and below; V_F= 5.0 V for BZW04P(-)213 and above

Revision: 12-Jul-11

Document Number: 88316

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

BZW04P13BHE3/54 替代型号

型号	品牌	替代类型	描述	数据表
BZW04-13BHE3/54	VISHAY	类似代替	TVS DIODE 12.8V 21.2V DO204AL
BZW04-13B-E3/54	VISHAY	类似代替	TVS DIODE 12.8V 21.2V DO204AL

与BZW04P13BHE3/54相关器件

型号	品牌	获取价格	描述	数据表
BZW04P13B-HE3/54	VISHAY	获取价格	400W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
BZW04P13BRL	STMICROELECTRONICS	获取价格	400W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN
BZW04P13-E3/23	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13-E3/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13-E3/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13HE3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13-HE3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P13RL	STMICROELECTRONICS	获取价格	400W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN

与BZW04P13BHE3/54相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P13BHE3/54

BZW04P13BHE3/54 数据手册

BZW04P13BHE3/54 替代型号

与BZW04P13BHE3/54相关器件

与BZW04P13BHE3/54相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P13BHE3/54

BZW04P13BHE3/54 数据手册

BZW04P13BHE3/54 替代型号

与BZW04P13BHE3/54相关器件

与BZW04P13BHE3/54相关文章

您还可以找

您在本页遇到什么问题？