Datasheet > BZW04P136

BZW04P136

更新时间： 2024-11-17 12:22:39

品牌	Logo	应用领域
台芯 - TAYCHIPST		/
页数	文件大小	规格书
4页	3832K
描述
Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZW04P136 数据手册

BZW04P-5V8 THRU BZW04-376

5.8V-376V 40A

Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Availablein uni-directionaland bi-directional

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MECHANICAL DATA

Case: DO-204AL, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Note: BZW04-213(B) ~ BZW04-376(B) for commercial grade only

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

400

See next table

1.5

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current, 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

P_D

I_FSM

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for BZW04P(-)188 and below; V_F= 5.0 V for BZW04P(-)213 and above

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

1 of 4

12 3 4

中文翻译

下载PDF

与BZW04P136相关器件

型号	品牌	获取价格	描述	数据表
BZW04P136/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/23	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 136V V(RWM), Unidirectional,
BZW04P136/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与BZW04P136相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

35

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P136

BZW04P136 数据手册

与BZW04P136相关器件

与BZW04P136相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P136

BZW04P136 数据手册

与BZW04P136相关器件

与BZW04P136相关文章

您还可以找

您在本页遇到什么问题？