Datasheet > BZW04P136/56

BZW04P136/56

更新时间： 2024-11-19 03:10:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	66K
描述
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZW04P136/56 数据手册

BZW04P-5V8 thru BZW04-376

Vishay Semiconductors

formerly General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

Peak Pulse Power 400W

Stand-off Voltage 5.8 to 376V

Features

DO-204AL (DO-41 Plastic)

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

• 400W peak pulse power capabililty with a 10/1000µs

waveform, repetition rate (duty cycle): 0.01%

• Excellent clamping capability

1.0 (25.4)

MIN.

• Low incremental surge resistance

• Very fast response time

• Typical I_Dless than 1µA above 10V rating

0.107 (2.7)

0.080 (2.0)

DIA.

• High temperature soldering guaranteed:

265^OC/10 seconds, 0.375” (9.5mm) lead length, 5lbs.

(2.3 kg) tension

0.205 (5.2)

0.160 (4.1)

Mechanical Data

Case: JEDEC DO-204AL molded plastic body over passi-

vated junction

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

1.0 (25.4)

MIN.

Polarity: For unidirectional types the color band denotes

the cathode, which is positive with respect to the anode

under normal TVS operation

0.034 (0.86)

0.028 (0.71)

DIA.

Mounting Position: Any

Weight: 0.012 oz., 0.3 g

Dimensions in inches and (millimeters)

Packaging Codes – Options (Antistatic):

51 – 1K per Bulk box, 10K/carton

Devices for Bidirectional Applications

54 – 5.5K per 13" paper Reel

For bi-directional use add suffix letter “B” (e.g. BZW04P-

(52mm horiz. tape), 16.5K/carton

6V4B). Electrical characteristics apply in both directions.

73 – 3K per horiz. tape & Ammo box, 30K/carton

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Minimum 400

See Next Table

1.0

Unit

Peak pulse power dissipation with a 10/1000µs waveform

(Note 1, Fig. 1)

P_PPM

Peak pulse current with a 10/1000µs waveform (Note 1)

I_PPM

Steady state power dissipation

P_M(AV)

at T_L= 75^OC, lead lengths 0.375” (9.5mm) (Note 2)

Peak forward surge current, 8.3ms

single half sine-wave unidirectional only (Note 3)

I_FSM

Maximum instantaneous forward voltage

at 25A for unidirectional only (Note 4)

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

°C

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(4) V_F= 3.5V for BZW04P(-)188 & below; V_F= 5.0V for BZW04P(-)213 & above

Document Number 88316

08-Jul-03

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与BZW04P136/56相关器件

型号	品牌	获取价格	描述	数据表
BZW04P136/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/60	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/62	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/64	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/65	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/66	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/68	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/70	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/71	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P136/72	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与BZW04P136/56相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P136/56

BZW04P136/56 数据手册

与BZW04P136/56相关器件

与BZW04P136/56相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P136/56

BZW04P136/56 数据手册

与BZW04P136/56相关器件

与BZW04P136/56相关文章

您还可以找

您在本页遇到什么问题？