Datasheet > BZW04P110

BZW04P110

更新时间： 2024-11-05 12:23:59

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
4页	189K
描述
Transient Voltage Suppressor

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中文翻译

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数据手册

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BZW04P110 数据手册

BZW04P-5V8--BZW04-376

Transient Voltage Suppressor

BREAKDOWN VOLTAGE: 5.8 --- 376 V

PEAK PULSE POWER: 400 W

Features

DO-41

Plastic package has underwriters laboratory

flammability classification 94V-0

Glass passivated junction

400W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.01%

Excellent clamping capability

Fast response time: typically less than 1.0ps from 0 Volts to

V_(BR)for uni-directional and 5.0ns for bi-directional types

Devices with V

10V I_Dare typically I_Dless than 1.0 μA

(BR)

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension

Mechanical Data

Dimensions in millimeters

Case:JEDEC DO--41, molded plastic body over

passivated junction

Terminals: axial leads, solderable per MIL-STD-750,

method 2026

Polarity: foruni-directional types the color band denotes

the cathode, which is postitive with respect to the

anode under normal TVS operation

Weight: 0.012 ounces, 0.34 grams

Mounting position: any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use add suffix letter "B" (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_PPM

I_PPM

VALUE

Minimum 400

See table 1

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

Steady state pow er dissipation at T_L=75

fffffLead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

1.0

Peak forw ard surge current, 8.3ms single half

ffffSine-wave superimposed on rated load (JEDEC Method) (NOTE 3)

40.0

Maximum instantaneous forw ard voltage at 25A for unidirectional only (NOTE 4)

V_F

3.5/6.5

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)220V, and V_F=5.0 Volt max. for devices of V_(BR)>220V

http://www.luguang.cn

mail:lge@luguang.cn

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中文翻译

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与BZW04P110相关器件

型号	品牌	获取价格	描述	数据表
BZW04P110/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 111V V(RWM), Unidirectional,
BZW04P110/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P110/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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