Datasheet > BZW04-6V4

BZW04-6V4

更新时间： 2024-11-04 00:01:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
7页	88K
描述
TRANSIL

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中文翻译

获取价格

数据手册

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BZW04-6V4 数据手册

BZW04-5V8/376

BZW04-5V8B/376B

TRANSIL^TM

FEATURES

■

PEAK PULSE POWER : 400 W (10/1000µs)

■

STAND-OFF VOLTAGE RANGE :

From 5.8V to 376 V

■

UNI AND BIDIRECTIONAL TYPES

LOW CLAMPING FACTOR

FAST RESPONSE TIME

UL RECOGNIZED

DESCRIPTION

Transil diodes provide high overvoltage protection

by clamping action. Their instantaneous response

to transient overvoltages makes them particu-

larly suited to protect voltage sensitive devices

such as MOS Technology and low voltage sup-

plied IC’s.

DO-15

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

P_PP

Parameter

Peak pulse power dissipation (see note 1)

Power dissipation on infinite heatsink

Value

400

1.7

Unit

Tj initial = Tamb

_amb= 75°C

I_FSM

Non repetitive surge peak forward current

for unidirectional types

tp = 10ms

Tj initial = T_amb

T_stg

T_j

Storage temperature range

Maximum junction temperature

- 65 to + 175

175

°C

T_L

Maximum lead temperature for soldering during 10s a 5mm

from case.

230

°C

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES

Symbol

R_{th (j-l)}

Parameter

Value

Unit

°C/W

Junction to leads

Junction to ambient on printed circuit.

R_{th (j-a)}

L_lead= 10 mm

100

February 2003- Ed : 3A

1/6

12 3 4 5 6 7

中文翻译

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