Datasheet > BZW04-64B

BZW04-64B

更新时间： 2024-11-03 05:07:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
4页	113K
描述
TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZW04-64B 数据手册

GALAXY ELECTRICAL

BZW04P-5V8 --- BZW04-376

BREAKDOWN VOLTAGE: 5.8 --- 376 V

PEAK PULSE POWER: 400 W

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES

Plastic package has underwriters laboratory

DO-41

flammability classification 94V-0

Glass passivated junction

400W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.01%

Excellent clamping capability

Fast response time: typically less than 1.0ps from 0 Volts to

V_(BR)for uni-directional and 5.0ns for bi-directional types

Devices with V

10V I_Dare typically I_Dless than 1.0 μA

(BR)

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension

MECHANICAL DATA

Case:JEDEC DO--41, molded plastic body over

passivated junction

Terminals: axial leads, solderable per MIL-STD-750,

method 2026

Polarity: foruni-directional types the color band denotes

the cathode, which is postitive with respect to the

anode under normal TVS operation

Weight: 0.012 ounces, 0.34 grams

Mounting position: any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use add suffix letter "B" (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_PPM

VALUE

Minimum 400

See table 1

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

I_PPM

Steady state pow er dissipation at T_L=75

fffffLead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

1.0

Peak forw ard surge current, 8.3ms single half

ffffSine-wave superimposed on rated load (JEDEC Method) (NOTE 3)

40.0

Maximum instantaneous forw ard voltage at 25A for unidirectional only (NOTE 4)

V_F

3.5/6.5

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

www.galaxycn.com

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)220V, and V_F=5.0 Volt max. for devices of V_(BR)>220V

BLGALAXY ELECTRICAL

Document Number 0285007

12 3 4

中文翻译

下载PDF

与BZW04-64B相关器件

型号	品牌	获取价格	描述	数据表
BZW04-64B(75V)	ETC	获取价格	Transient Voltage Suppressor (TVS)
BZW04-64B/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 64.1V V(RWM), Bidirectional,
BZW04-64B/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
BZW04-64B/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-

与BZW04-64B相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

30
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

29

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04-64B

BZW04-64B 数据手册

与BZW04-64B相关器件

与BZW04-64B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04-64B

BZW04-64B 数据手册

与BZW04-64B相关器件

与BZW04-64B相关文章

您还可以找

您在本页遇到什么问题？