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BZW04-5V8BHE3/54

更新时间： 2024-11-03 14:29:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
6页 96K
描述
Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

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BZW04-5V8BHE3/54 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50Factory Lead Time：12 weeks
风险等级：5.49Is Samacsys：N
其他特性：EXCELLENT CLAMPING CAPABILITY最大击穿电压：7.14 V
最小击穿电压：6.45 V击穿电压标称值：6.795 V
外壳连接：ISOLATED最大钳位电压：10.5 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：400 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.5 W参考标准：AEC-Q101
最大重复峰值反向电压：5.8 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

BZW04-5V8BHE3/54 数据手册

 浏览型号BZW04-5V8BHE3/54的Datasheet PDF文件第2页浏览型号BZW04-5V8BHE3/54的Datasheet PDF文件第3页浏览型号BZW04-5V8BHE3/54的Datasheet PDF文件第4页浏览型号BZW04-5V8BHE3/54的Datasheet PDF文件第5页浏览型号BZW04-5V8BHE3/54的Datasheet PDF文件第6页 
BZW04-5V8 thru BZW04-376  
www.vishay.com  
Vishay General Semiconductor  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-204AL (DO-41)  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
VWM  
5.8 V to 376 V  
V
BR (uni-directional)  
6.45 V to 462 V  
VBR (bi-directional)  
6.45 V to 462 V  
PPPM  
PD  
400 W  
MECHANICAL DATA  
1.5 W  
Case: DO-204AL, molded epoxy over passivated chip  
I
FSM (uni-directional only)  
40 A  
175 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
TJ max.  
Polarity  
Uni-directional, bi-directional  
Package  
DO-204AL (DO-41)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use suffix (e.g.  
BZW04P-6V4B).  
Electrical characteristics apply in both directions.  
Note  
B
•
BZW04-213(B) to BZW04-376(B) for commercial grade only  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unles otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
400  
See next table  
1.5  
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)  
Operating junction and storage temperature range  
PD  
W
IFSM  
40  
A
VF  
3.5/5.0  
-55 to +175  
V
TJ, TSTG  
°C  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above  
Revision: 02-Dec-13  
Document Number: 88316  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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BZW04-5V8BHE3/54 替代型号

型号 品牌 替代类型 描述 数据表
BZW04P5V8B-E3/54 VISHAY

完全替代

 Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04-5V8B-E3/54 VISHAY

完全替代

 TVS DIODE 5.8V 10.5V DO204AL
BZW04P5V8BHE3/54 VISHAY

完全替代

 Trans Voltage Suppressor Diode, 5.8V V(RWM), Bidirectional,

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