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BZV55C3V6 PDF预览

BZV55C3V6

更新时间: 2024-11-29 04:50:35
品牌 Logo 应用领域
虹扬 - HY 稳压二极管测试
页数 文件大小 规格书
4页 182K
描述
ZENER DIODE

BZV55C3V6 数据手册

 浏览型号BZV55C3V6的Datasheet PDF文件第2页浏览型号BZV55C3V6的Datasheet PDF文件第3页浏览型号BZV55C3V6的Datasheet PDF文件第4页 
BZV55C SERIES  
REVERSE VOLTAGE - 2.4 to 188 Volts  
DL - 35  
ZENER DIODE  
FEATURES  
Small surface mounting type  
High reliability  
APPLICATIONS  
Voltage stabilization  
.063(1.6)  
.055(1.4)  
.020(0.5)  
.012(0.3)  
.020(0.5)  
.012(0.3)  
.146(3.7)  
.130(3.3)  
CONSTRUCTION  
Silicon epitaxial planar  
Dimensions in inches and (millimeters)  
ABSOLUTE MAXIMUM RATINGS  
TJ=25  
Parameter  
Test Conditions  
Type  
Symbol  
Pv  
Value  
500  
Unit  
Mw  
MA  
Power dissipation  
Z-current  
I=4mm TL25℃  
Iz  
Pv/Vz  
Junction temperature  
Storage temperature range  
175℃  
Tstg  
-55 ~ +200  
MAXIMUM THERMAL RESISTANCE  
TJ=25℃  
Parameter  
Test Conditions  
Symbol  
RthJA  
Value  
350  
Unit  
K/W  
Junction ambient  
I=4mm TL=constant  
ELECTRICAL CHARACTERISTICS  
TJ=25℃  
Parameter  
Test Conditions  
IF=200mA  
Type  
Symbol  
VF  
Min  
Typ  
Max  
1.5  
Unit  
V
Forward voltage  
~ 403 ~  

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