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BZT55F6V2 PDF预览

BZT55F6V2

更新时间: 2024-12-01 15:28:59
品牌 Logo 应用领域
TEMIC 测试二极管
页数 文件大小 规格书
6页 96K
描述
Zener Diode, 6.2V V(Z), 3%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

BZT55F6V2 技术参数

生命周期:Transferred包装说明:GLASS, SIMILAR TO DO-213AA, QUADROMELF-2
Reach Compliance Code:unknown风险等级:5.78
其他特性:LOW NOISE, VERY HIGH STABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:6.2 V表面贴装:YES
技术:ZENER端子形式:WRAP AROUND
端子位置:END最大电压容差:3%
工作测试电流:5 mABase Number Matches:1

BZT55F6V2 数据手册

 浏览型号BZT55F6V2的Datasheet PDF文件第2页浏览型号BZT55F6V2的Datasheet PDF文件第3页浏览型号BZT55F6V2的Datasheet PDF文件第4页浏览型号BZT55F6V2的Datasheet PDF文件第5页浏览型号BZT55F6V2的Datasheet PDF文件第6页 
BZT55C...  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
96 12009  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
Power dissipation  
Z–current  
R
P
thJA  
V
Z
I
P /V  
V
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
Junction ambient  
R
thJA  
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol  
Min  
Typ  
Max  
1.5  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (6)  
Rev. A2, 24-Jun-96  

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