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BZT55F6V8GS18 PDF预览

BZT55F6V8GS18

更新时间: 2024-12-02 03:43:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 153K
描述
Zener Diode, 6.8V V(Z), 3%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2

BZT55F6V8GS18 数据手册

 浏览型号BZT55F6V8GS18的Datasheet PDF文件第2页浏览型号BZT55F6V8GS18的Datasheet PDF文件第3页浏览型号BZT55F6V8GS18的Datasheet PDF文件第4页浏览型号BZT55F6V8GS18的Datasheet PDF文件第5页浏览型号BZT55F6V8GS18的Datasheet PDF文件第6页 
BZT55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
96 12009  
Applications  
Voltage stabilization  
Order Instruction  
Type  
BZT55C2V4  
Ordering Code  
BZT55C2V4–GS08  
BZT55C2V4–GS18  
Remarks  
Tape and Reel (2.500 pcs)  
Tape and Reel (10.000 pcs)  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
R
300K/W  
P
V
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50 mmx50 mmx1.6 mm  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85601  
Rev. 4, 12-Mar-01  
www.vishay.com  
1 (6)  

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