Datasheet > BZT55C27

BZT55C27

更新时间： 2024-11-14 22:54:07

品牌	Logo	应用领域
TEMIC		二极管
页数	文件大小	规格书
6页	82K
描述
Silicon Epitaxial Planar Z-Diodes

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中文翻译

获取价格

数据手册

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BZT55C27 数据手册

BZT55C...

TELEFUNKEN Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Very high stability

D Low noise

D Available with tighter tolerances

Applications

94 9373

Voltage stabilization

Absolute Maximum Ratings

T = 25_C

Parameter

Test Conditions

x300K/W

Type

Symbol

Value

500

Unit

°C

Power dissipation

thJA

Z–current

P /V

Junction temperature

Storage temperature range

175

stg

–65...+175

°C

Maximum Thermal Resistance

T = 25_C

Parameter

Test Conditions

on PC board 50mmx50mmx1.6mm

Symbol

Value

500

Unit

K/W

Junction ambient

thJA

Characteristics

T = 25_C

Parameter

Test Conditions

I =200mA

Type

Symbol

Min

Typ

Max

1.5

Unit

Forward voltage

Rev. A1: 12.12.1994

12 3 4 5 6

中文翻译

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