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BZT55C2V4 PDF预览

BZT55C2V4

更新时间: 2024-11-14 22:54:07
品牌 Logo 应用领域
威世 - VISHAY 二极管测试
页数 文件大小 规格书
6页 81K
描述
Silicon Epitaxial Planar Z-Diodes

BZT55C2V4 数据手册

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BZT55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
96 12009  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
R
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
Junction ambient on PC board 50mmx50mmx1.6mm  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85601  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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