Datasheet > BZT55B9V1-GS08

BZT55B9V1-GS08

更新时间： 2024-11-16 03:12:43

品牌	Logo	应用领域
威世 - VISHAY		测试二极管
页数	文件大小	规格书
6页	69K
描述
Zener Diode, 9.1V V(Z), 2%, 0.5W,

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BZT55B9V1-GS08 数据手册

BZT55B...

Vishay Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Available with tighter tolerances

D Very high stability

D Low noise

D V –tolerance ± 2%

96 12009

Applications

D Voltage stabilization

Order Instruction

Type

Ordering Code

Remarks

BZT55B2V4

BZT55B2V4–GS08

Tape and Reel

Absolute Maximum Ratings

Tj = 25°C

Parameter

Test Conditions

Type

Symbol

Value

500

Unit

°C

Power dissipation

Z–current

thJA

x300K/W

P /V

Junction temperature

Storage temperature range

Junction ambient

175

stg

–65...+175

500

°C

on PC board

thJA

K/W

50 mm x 50 mm x 1.6 mm

Electrical Characteristics

Tj = 25°C

Parameter

Test Conditions

I =200mA

Symbol

Min.

Typ.

Max.

1.5

Unit

Forward voltage

Document Number 85637

Rev. 1, 22–May–02

www.vishay.com

1 (6)

12 3 4 5 6

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