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BZT55C11 PDF预览

BZT55C11

更新时间: 2024-11-15 12:53:47
品牌 Logo 应用领域
TYSEMI 二极管测试
页数 文件大小 规格书
3页 204K
描述
500mW Power Dissipation, Low reverse current level

BZT55C11 数据手册

 浏览型号BZT55C11的Datasheet PDF文件第2页浏览型号BZT55C11的Datasheet PDF文件第3页 
Product specification  
BZT55C11  
Features  
LL-34  
Unit: mm  
500mW Power Dissipation  
Low reverse current level  
Very high stability  
2.64REF  
0.50  
0.35  
1.50  
1.30  
Low noise  
Ideal for Surface Mountted Application  
3.60  
3.30  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Power Dissipation  
Symbol  
PD  
Rating  
500  
Unit  
mW  
V
(Note 1)  
(Note 1)  
Forward Voltage @ IF = 200mA  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
VF  
1.5  
RθJA  
Tj, TSTG  
300  
/W  
-65 to +175  
Notes: 1. Valid provided that electrodes are kept at ambient temperature.  
Electrical Characteristics Ta = 25℃  
Zener Voltage Range  
(Note 2)  
Maximum Zener  
Impedance  
Maximum Reverse  
Current  
Type  
VZ @ IZT  
IR  
@
VR  
IZT  
ZZT @ IZT  
ZZK @ IZK  
IZK  
Nom (V) Min (V) Max (V)  
mA  
5
mA  
1
V
μA  
Ω
Ω
BZT55C11  
11  
10.4  
11.6  
20  
70  
0.1  
8.2  
Notes: 2. Tested with pulses, Tp 100ms.  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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