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BZT55B3V0

更新时间: 2024-11-15 06:45:03
品牌 Logo 应用领域
商升特 - SEMTECH 二极管齐纳二极管局域网
页数 文件大小 规格书
5页 313K
描述
SILICON EPITAXIAL PLANAR ZENER DIODES

BZT55B3V0 数据手册

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BZT55 Series  
SILICON EPITAXIAL PLANAR ZENER DIODES  
Features  
LS-34  
• Very sharp reverse characteristic  
• Low reverse current level  
• Available with tighter tolerances  
• Very high stability  
• Low noise  
QuadroMELF  
Dimensions in mm  
Applications  
• Voltage stabilization  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
500  
Unit  
mW  
mA  
Power Dissipation  
Ptot  
IZ  
Z-Current  
Ptot / VZ  
175  
O
C
Junction Temperature  
Storage Temperature Range  
Tj  
O
C
TS  
- 65 to + 175  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
RthJA  
Max.  
500  
Unit  
K/W  
Thermal Resistance Junction to Ambient Air  
On PC board 50 mm X 50 mm X 1.6 mm  
Forward Voltage  
at IF = 100 mA  
VF  
1.5  
V
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 12/01/2007  

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