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BZT55B3V6 PDF预览

BZT55B3V6

更新时间: 2024-11-15 20:32:15
品牌 Logo 应用领域
TEMIC /
页数 文件大小 规格书
6页 96K
描述
Zener Diode, 3.6V V(Z), 2%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

BZT55B3V6 技术参数

生命周期:Transferred包装说明:GLASS, SIMILAR TO DO-213AA, QUADROMELF-2
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:N其他特性:LOW NOISE, VERY HIGH STABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.6 V
表面贴装:YES技术:ZENER
端子形式:WRAP AROUND端子位置:END
最大电压容差:2%工作测试电流:5 mA
Base Number Matches:1

BZT55B3V6 数据手册

 浏览型号BZT55B3V6的Datasheet PDF文件第2页浏览型号BZT55B3V6的Datasheet PDF文件第3页浏览型号BZT55B3V6的Datasheet PDF文件第4页浏览型号BZT55B3V6的Datasheet PDF文件第5页浏览型号BZT55B3V6的Datasheet PDF文件第6页 
BZT55C...  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
96 12009  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
Power dissipation  
Z–current  
R
P
thJA  
V
Z
I
P /V  
V
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
Junction ambient  
R
thJA  
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol  
Min  
Typ  
Max  
1.5  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (6)  
Rev. A2, 24-Jun-96  

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