Datasheet > BZT52C9V1

BZT52C9V1

更新时间： 2024-12-01 12:33:27

品牌	Logo	应用领域
TYSEMI		二极管 PC
页数	文件大小	规格书
2页	103K
描述
Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current

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BZT52C9V1 数据手册

Product specification

BZT52C2V0 - BZT52C39

Features

Planar Die Construction

500mW Power Dissipation on Ceramic PCB

General Purpose, Medium Current

Absolute Maximum Ratings (Ta = 25

)

Parameter

Power dissipation

Symbol

Rating

500

Unit

Thermal Resistance, Junction to Ambient Air

250

Forward Voltage

@ I^F= 10mA

V^F

0.9

Jumction temperature

Storage temperature

T^j

150

T^stg

-65 to +150

Electrical Characteristics (Ta = 25

)

Typical

Temperature

Coefficient

@ I^ZTC

Maximum

Reverse

Current

Test

Current

I^ZTC

Zener voltage

Maximum Zener Impedance

V^Z(V)

Type

Marking

mV/

Z^ZT@ I^ZTZ^ZK@ I^ZK

I^R

I^ZK

@ V^R

(V)

Nom. Min. Max.

Min. Max.

(mA)

(

)

(

)

(

BZT52C2V0

BZT52C2V4

BZT52C2V7

BZT52C3V0

BZT52C3V3

BZT52C3V6

BZT52C3V9

BZT52C4V3

BZT52C4V7

BZT52C5V1

2.0

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

1.91

2.2

2.5

2.8

3.1

3.4

3.7

4.0

4.4

4.8

2.09

2.6

2.9

3.2

3.5

3.8

4.1

4.6

5.0

5.4

100

600

500

480

1.0

150

1.0

2.0

-3.5

-2.7

5.0

3.0

2.0

0.2

1.2

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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