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BZT52B24-E3-18 PDF预览

BZT52B24-E3-18

更新时间: 2024-11-11 22:55:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 138K
描述
DIODE ZENER 24V 410MW SOD123

BZT52B24-E3-18 数据手册

 浏览型号BZT52B24-E3-18的Datasheet PDF文件第2页浏览型号BZT52B24-E3-18的Datasheet PDF文件第3页浏览型号BZT52B24-E3-18的Datasheet PDF文件第4页浏览型号BZT52B24-E3-18的Datasheet PDF文件第5页浏览型号BZT52B24-E3-18的Datasheet PDF文件第6页浏览型号BZT52B24-E3-18的Datasheet PDF文件第7页 
BZT52-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes  
FEATURES  
Available  
• Silicon planar Zener diodes  
• The Zener voltages are graded according to  
the international E24 standard  
• AEC-Q101 qualified available  
• ESD capability according to AEC-Q101:  
Human body model > 8 kV  
Machine model > 800 V  
click logo to get started  
DESIGN SUPPORT TOOLS  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
Models  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
Available  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
PARAMETER  
VALUE  
2.4 to 75  
2.5; 5  
UNIT  
V
VZ range nom.  
Test current IZT  
VZ specification  
Circuit configuration  
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZT52C2V4-E3-08 to BZT52C75-E3-08  
BZT52B2V4-E3-08 to BZT52B75-E3-08  
BZT52C2V4-HE3-08 to BZT52C75-HE3-08  
BZT52B2V4-HE3-08 to BZT52B75-HE3-08  
BZT52C2V4-E3-18 to BZT52C75-E3-18  
BZT52B2V4-E3-18 to BZT52B75-E3-18  
BZT52C2V4-HE3-18 to BZT52C75-HE3-18  
BZT52B2V4-HE3-18 to BZT52B75-HE3-18  
3000 (8 mm tape on 7" reel)  
15 000/box  
BZT52-series  
10 000 (8 mm tape on 13" reel)  
10 000/box  
PACKAGE  
MOLDING COMPOUND  
WEIGHT  
MOISTURE SENSITIVITY  
LEVEL  
PACKAGE NAME  
SOLDERING CONDITIONS  
FLAMMABILITY RATING  
MSL level 1  
(according J-STD-020)  
SOD-123  
10.3 mg  
UL 94 V-0  
260 °C/10 s at terminals  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Diode on ceramic substrate 0.7 mm;  
Ptot  
500  
mW  
5 mm2 pad areas  
Power dissipation  
Diode on ceramic substrate 0.7 mm;  
Ptot  
410  
mW  
2.5 mm2 pad areas  
Zener current  
See table “Electrical Characteristics “  
Valid provided that electrodes are kept at  
ambient temperature  
Thermal resistance junction to ambient air  
RthJA  
300  
K/W  
Tj  
Junction temperature  
150  
°C  
°C  
°C  
Tstg  
Top  
Storage temperature range  
Operating temperature range  
-65 to +150  
-55 to +150  
Rev. 1.9, 20-Feb-18  
Document Number: 85760  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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