Nexperia
BZT52-Q series
Voltage regulator diodes
BZT52 Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx-Q
voltage
VZ (V);
IZ = 2 mA
resistance rdif (Ω) current IR (μA) coefficient
capacitance peak reverse
SZ (mV/K);
IZ = 5 mA
Cd (pF) [1]
current
IZSM (A) [2]
Min
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
Max
Max
47
51
B
C
B
C
46.1 47.9 325
44.0 50.0
90
0.05
32.9
42.0
51.8
40
0.5
50.0 52.0 350
48.0 54.0
100
0.05
35.7
46.6
57.2
40
0.4
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
Table 10. Characteristics per type; BZT52-B56-Q to BZT52-C75-Q
Tj = 25 °C unless otherwise specified.
BZT52 Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx-Q
voltage
VZ (V);
IZ = 2 mA
resistance rdif (Ω) current IR (μA) coefficient
capacitance peak reverse
SZ (mV/K);
IZ = 5 mA
Cd (pF) [1]
current
IZSM (A) [2]
Min
Max IZ = 0.5 mA IZ = 2 mA Max
VR (V) Min
Max
Max
Max
56
62
68
75
B
C
B
C
B
C
B
C
54.9 57.1 375
52.0 60.0
120
140
160
175
0.05
0.05
0.05
0.05
39.2
43.4
47.6
52.5
52.2
58.8
65.6
73.4
63.8
71.6
79.8
88.6
40
0.3
60.8 63.2 400
58.0 66.0
35
35
35
0.3
66.6 69.4 400
64.0 72.0
0.25
0.20
73.5 76.5 400
70.0 79.0
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
aaa-028521
aaa-028550
3
2
3
10
10
I
F
(mA)
P
ZSM
(W)
10
2
10
10
1
-1
10
10
-2
10
10
-3
1
10
-1
0.4
0.6
0.8
1.0
1
10
t
(ms)
V
(V)
p
F
Tj = 25 °C
(1) Tj = 25 °C (before surge)
Fig. 2. Forward current as a function of forward
voltage; typical values (BZT52-B/C2V4-Q)
Fig. 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
©
BZT52-Q_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 1 — 29 March 2023
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