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BZT52C75-V-G PDF预览

BZT52C75-V-G

更新时间: 2024-11-18 19:37:03
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 108K
描述
DIODE 75 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode

BZT52C75-V-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.62配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:75 V
表面贴装:YES技术:ZENER
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:6.04%工作测试电流:2.5 mA
Base Number Matches:1

BZT52C75-V-G 数据手册

 浏览型号BZT52C75-V-G的Datasheet PDF文件第2页浏览型号BZT52C75-V-G的Datasheet PDF文件第3页浏览型号BZT52C75-V-G的Datasheet PDF文件第4页浏览型号BZT52C75-V-G的Datasheet PDF文件第5页浏览型号BZT52C75-V-G的Datasheet PDF文件第6页浏览型号BZT52C75-V-G的Datasheet PDF文件第7页 
BZT52-V-G-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon planar power zener diodes  
• These diodes are also available in other  
case styles and other configurations  
including: the SOT-23 case with type  
designation BZX84 series, the dual zener  
diode common anode configuration in the  
SOT-23 case with type designation AZ23  
series and the dual zener diode common  
cathode configuration in the SOT-23 case with  
type designation DZ23 series.  
17431  
• The zener voltages are graded according to the  
international E 24 standard.  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123  
Weight: approx. 9.4 mg  
Packaging codes/options:  
18/10 k per 13 " reel (8 mm tape), 10 k/box  
08/3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current see table  
" Characteristics "  
500 2)  
410 1)  
Ptot  
Ptot  
Power dissipation  
Power dissipation  
mW  
mW  
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas  
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
300 1)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
TJ  
Junction temperature  
150  
°C  
°C  
TS  
Storage temperature range  
- 65 to + 150  
1) Valid provided that electrodes are kept at ambient temperature  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 83340  
Rev. 1.1, 26-Aug-10  
www.vishay.com  
1

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