Nexperia
BZT52-Q series
Voltage regulator diodes
BZT52 Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx-Q
voltage
VZ (V);
IZ = 5 mA
resistance rdif (Ω) current IR (μA) coefficient
capacitance peak reverse
SZ (mV/K);
IZ = 5 mA
Cd (pF) [1]
current
IZSM (A) [2]
Min
9.8
9.4
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
8.0
Max
Max
10
11
12
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
10.2 70
10.6
10
10
10
10
15
20
20
20
25
30
0.2
7
4.5
90
3.0
10.8 11.2 70
10.4 11.6
0.1
8
5.4
9.0
85
85
80
75
75
70
60
60
55
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
11.8 12.2 90
11.4 12.7
0.1
8
6.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
12.7 13.3 110
12.4 14.1
0.1
8
7.0
14.7 15.3 110
13.8 15.6
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14
9.2
15.7 16.3 170
15.3 17.1
10.4
12.4
14.4
16.4
18.4
17.6 18.4 170
16.8 19.1
19.6 20.4 220
18.8 21.2
21.6 22.4 220
20.8 23.3
15.4
16.8
23.5 24.5 220
22.8 25.6
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
Table 9. Characteristics per type; BZT52-B27-Q to BZT52-C51-Q
Tj = 25 °C unless otherwise specified.
BZT52 Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx-Q
voltage
VZ (V);
IZ = 2 mA
resistance rdif (Ω) current IR (μA) coefficient
capacitance peak reverse
SZ (mV/K);
IZ = 5 mA
Cd (pF) [1]
current
IZSM (A) [2]
Min
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
Max
Max
27
30
33
36
39
43
B
C
B
C
B
C
B
C
B
C
B
C
26.5 27.5 250
25.1 28.9
40
40
40
60
75
80
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21.4
24.4
27.4
30.4
33.4
37.6
25.3
29.4
33.4
37.4
41.2
46.6
50
1.0
29.4 30.6 250
28.0 32.0
21
50
45
45
45
40
1.0
0.9
0.8
0.7
0.6
32.3 33.7 250
31.0 35.0
23.1
25.2
27.3
30.1
35.3 36.7 250
34.0 38.0
38.2 39.8 300
37.0 41.0
42.1 43.9 325
40.0 46.0
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BZT52-Q_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 1 — 29 March 2023
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