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BZT52-C30-T3 PDF预览

BZT52-C30-T3

更新时间: 2024-11-14 03:10:31
品牌 Logo 应用领域
WTE /
页数 文件大小 规格书
4页 56K
描述
Zener Diode, 30V V(Z), 5%, 0.41W

BZT52-C30-T3 数据手册

 浏览型号BZT52-C30-T3的Datasheet PDF文件第2页浏览型号BZT52-C30-T3的Datasheet PDF文件第3页浏览型号BZT52-C30-T3的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
BZT52-C2V4 – BZT52-C39  
410mW SURFACE MOUNT ZENER DIODE  
Features  
!
Planar Die Construction  
!
!
!
!
!
410mW Power Dissipation  
2.4 – 39V Nominal Zener Voltage  
5% Standard Vz Tolerance  
Designed for Surface Mount Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
A
SOD-123  
Dim  
A
Min  
3.6  
2.5  
1.4  
0.5  
Max  
3.9  
C
B
2.8  
D
C
1.8  
B
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
D
0.7  
E
0.2  
E
G
H
0.4  
0.95  
Mechanical Data  
!
!
H
1.35  
0.12  
Case: SOD-123, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
G
J
J
All Dimensions in mm  
!
!
!
Polarity: Cathode Band  
Weight: 0.01 grams (approx.)  
Marking: Device Code (See Table Next Page)  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Peak Pulse Power Dissipation at TA = 25°C (Note 1)  
Forward Voltage @ IF = 10mA  
Symbol  
Value  
Unit  
Pd  
VF  
410  
0.9  
mW  
V
Thermal Resistance Junction to Ambient (Note 1)  
RJA  
Tj, TSTG  
300  
°C/W  
°C  
Operating and Storage Temperature Range  
-65 to +150  
Note: 1. Diode on ceramic substrate 10mm x 8mm x 0.7mm.  
BZT52-C2V4 – BZT52-C39  
1 of 4  
© 2002 Won-Top Electronics  

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