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BZT52-B10 PDF预览

BZT52-B10

更新时间: 2024-11-20 04:09:59
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管
页数 文件大小 规格书
5页 96K
描述
SURFACE MOUNT SILICON ZENER DIODES

BZT52-B10 数据手册

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BZT52-B4V3 SERIES  
SURFACE MOUNT SILICON ZENER DIODES  
Unit: inch (mm)  
SOD-123  
500mWatts  
4.3 to 51 Volts  
POWER  
VOLTAGE  
FEATURES  
.154(3.90)  
.141(3.60)  
• Planar Die construction  
• 500mW Power Dissipation  
• Zener Voltages from 4.3~51V  
.110(2.8)  
.098(2.5)  
• Ideally Suited for Automated Assembly Processes  
• Pb free product : 99% Sn above can meet RoHS  
environment substance directive request  
MECHANICALDATA  
• Case: SOD-123, Molded Plastic  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: See Diagram Below  
• Approx. Weight: 0.01 grams  
.016(.40)MIN  
.005(.12)MAX  
• Mounting Position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Maximum Forward Voltage Drop at IF=100mA  
Maximum Power Dissipation (Notes A) at 25OC  
Symbol  
Value  
1.0  
Units  
V
V
F
500  
4.0  
mW  
Amps  
OC  
P
D
Peak Forward Surge Current, 8.3ms single half  
sine-wave superimposed on rated load (JEDEC method) (Notes B)  
IFSM  
Operating Junction and StorageTemperature Range  
-50 to +150  
TJ  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
V010-DEC.29.2005  
PAGE . 1  

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