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BZM55B24-T PDF预览

BZM55B24-T

更新时间: 2024-11-13 20:47:55
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
6页 111K
描述
Zener Diode,

BZM55B24-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-LELF-R2Reach Compliance Code:compliant
风险等级:5.75外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W标称参考电压:24 V
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2%工作测试电流:5 mA
Base Number Matches:1

BZM55B24-T 数据手册

 浏览型号BZM55B24-T的Datasheet PDF文件第2页浏览型号BZM55B24-T的Datasheet PDF文件第3页浏览型号BZM55B24-T的Datasheet PDF文件第4页浏览型号BZM55B24-T的Datasheet PDF文件第5页浏览型号BZM55B24-T的Datasheet PDF文件第6页 
BZM55B  
SERIES  
SURFACE MOUNT ZENER DIODES  
VOLTAGE RANGE 2.4 to 75 Volts POWER 500 mWatt  
FEATURES  
MICRO-MELF  
* Planar Die construction  
* 500mW Power Dissipation  
* Ideally Suited for Automated Assembly Processes  
0.043(1.1)  
MECHANICAL DATA  
* Case: Molded Glass MICRO-MELF  
* Terminals: Solderable per MIL-STD-750, Method 2026  
0.008(0.2)  
0.008(0.2)  
0.079(2.0)  
0.071(1.8)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Resistive or inductive load.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
500  
Units  
mW  
Power Dissipation at T  
Junction Temperature  
Storage Temperature Range  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.  
A
= 25OC  
P
TOT  
OC  
OC  
TJ  
-65 to +175  
-65 to +175  
TS  
Parameter  
Symbol  
RQJA  
Min.  
--  
Typ.  
--  
Max.  
0.3  
Units  
Thermal Resistance Junction to Ambient Air  
oC/mW  
V
Forward Voltage at IF = 200mA  
VF  
--  
--  
1.5  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.  
2018-12/62  
REV: O  

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