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BZG4748 PDF预览

BZG4748

更新时间: 2024-11-10 09:03:59
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
4页 66K
描述
Silicon Z–Diodes

BZG4748 技术参数

生命周期:Obsolete零件包装代码:DO-214
包装说明:PLASTIC, DO-214, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-214
JESD-30 代码:R-PDSO-C2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:1.25 W
认证状态:Not Qualified标称参考电压:22 V
表面贴装:YES技术:ZENER
端子形式:C BEND端子位置:DUAL
最大电压容差:10%工作测试电流:11.5 mA
Base Number Matches:1

BZG4748 数据手册

 浏览型号BZG4748的Datasheet PDF文件第2页浏览型号BZG4748的Datasheet PDF文件第3页浏览型号BZG4748的Datasheet PDF文件第4页 
BZG47.. , BZG47..A  
Vishay Telefunken  
Silicon Z–Diodes  
Features  
Passivated junction  
High reliability  
Voltage range 3.3 V to 100 V  
Fits onto 5 mm SMD footpads  
Wave and reflow solderable  
V
Znom  
±10% and ±5% tolerance  
15 811  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Non repetitive peak surge  
power dissipation  
Test Conditions  
<100K/W, T =25 C  
t =100 s sq.pulse,  
Type  
Symbol  
Value  
1.25  
50  
Unit  
W
W
R
P
V
thJA  
amb  
P
ZSM  
p
T =25 C prior to surge  
j
Junction temperature  
Storage temperature range  
T
T
stg  
150  
–65...+150  
C
C
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction lead  
Test Conditions  
Symbol  
Value  
35  
150  
125  
100  
Unit  
K/W  
K/W  
K/W  
K/W  
R
thJL  
thJA  
thJA  
thJA  
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a  
mounted on epoxy–glass hard tissue, Fig. 1b  
R
R
R
mounted on Al–oxid–ceramic (Al O ), Fig. 1b  
2
3
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.2A  
Type  
Symbol Min  
Typ Max Unit  
1.2  
V
F
V
F
Document Number 85623  
Rev. 5, 06-Aug-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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