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BZG05C6V2TR PDF预览

BZG05C6V2TR

更新时间: 2024-11-10 12:28:27
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
6页 99K
描述
Zener Diodes

BZG05C6V2TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.8其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-214
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1.25 W
认证状态:Not Qualified标称参考电压:6.2 V
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:6.45%工作测试电流:35 mA
Base Number Matches:1

BZG05C6V2TR 数据手册

 浏览型号BZG05C6V2TR的Datasheet PDF文件第2页浏览型号BZG05C6V2TR的Datasheet PDF文件第3页浏览型号BZG05C6V2TR的Datasheet PDF文件第4页浏览型号BZG05C6V2TR的Datasheet PDF文件第5页浏览型号BZG05C6V2TR的Datasheet PDF文件第6页 
BZG05C-Series  
Vishay Semiconductors  
www.vishay.com  
Zener Diodes  
FEATURES  
• High reliability  
• Voltage range 3.3 V to 100 V  
• Fits onto 5 mm SMD footpads  
• Wave and reflow solderable  
• AEC-101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
APPLICATIONS  
• Voltage stabilization  
PRIMARY CHARACTERISTICS  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
3.3 to 100  
2.7 to 80  
Pulse current  
Single  
UNIT  
V
mA  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
BZG05C-series-TR  
BZG05C-series-TR3  
TAPED UNITS PER REEL  
1500 per 7" reel  
MINIMUM ORDER QUANTITY  
BZG05C-series  
BZG05C-series  
6000 per 13" reel  
6000/box  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
77 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
DO-214AC  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
Ptot  
VALUE  
UNIT  
mW  
RthJA < 30 K/W, Tamb = 60 °C  
RthJA < 100 K/W, Tamb = 25 °C  
3000  
1250  
Power dissipation  
Ptot  
mW  
Non repetitive peak surge power  
dissipation  
tp = 100 μs sq.pulse, Tj = 25 °C  
prior to surge  
PZSM  
RthJL  
RthJA  
60  
30  
W
Junction to lead  
K/W  
K/W  
Mounted on epoxy-glass hard tissue,  
150  
fig. 1a  
Mounted on epoxy-glass hard tissue,  
fig. 1b  
Mounted on Al-oxid-ceramic (Al2O3),  
fig. 1b  
Junction to ambient air  
RthJA  
RthJA  
125  
100  
K/W  
K/W  
Junction temperature  
Tj  
Tstg  
VF  
150  
- 65 to + 150  
1.2  
°C  
°C  
V
Storage temperature range  
Forward voltage (max.)  
IF = 0.2 A  
Rev. 2.1, 29-Nov-11  
Document Number: 85595  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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