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BZG04-13/TR3 PDF预览

BZG04-13/TR3

更新时间: 2024-11-20 20:59:39
品牌 Logo 应用领域
威世 - VISHAY 光电二极管电视
页数 文件大小 规格书
5页 77K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor

BZG04-13/TR3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknown风险等级:5.78
Is Samacsys:N其他特性:HIGH RELIABILITY
最小击穿电压:15.3 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:300 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1.25 W
认证状态:Not Qualified最大重复峰值反向电压:13 V
表面贴装:YES技术:ZENER
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BZG04-13/TR3 数据手册

 浏览型号BZG04-13/TR3的Datasheet PDF文件第2页浏览型号BZG04-13/TR3的Datasheet PDF文件第3页浏览型号BZG04-13/TR3的Datasheet PDF文件第4页浏览型号BZG04-13/TR3的Datasheet PDF文件第5页 
BZG04-Series  
Vishay Semiconductors  
www.vishay.com  
Zener Diodes with Surge Current Specification  
FEATURES  
• High reliability  
• Stand-off voltage range 8.2 V to 220 V  
• Excellent clamping cabability  
• Fast response time (typ. £ 1 ps from 0 to VZmin.  
• AEC-Q101 qualified  
)
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
APPLICATIONS  
• Protection from high voltage, high energy transients  
PRIMARY CHARACTERISTICS  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
10 to 270  
2 to 50  
UNIT  
V
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
BZG04-series-TR3  
BZG04-series-TR  
TAPED UNITS PER REEL  
6000 per 13" reel  
MINIMUM ORDER QUANTITY  
BZG04-series  
6000/box  
BZG04-series  
1500 per 7" reel  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
77 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
DO-214AC  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
mW  
RthJA < 25 K/W, Tamb = 100 °C  
RthJA < 100 K/W, Tamb = 50 °C  
Ptot  
3000  
1250  
Power dissipation  
Ptot  
mW  
Non repetitive peak surge power  
dissipation  
tp = 10/1000 μs sq.pulse,  
Tj = 25 °C prior to surge  
PZSM  
300  
W
Peak forward surge current  
Junction to lead  
10 ms single half sine wave  
IFSM  
RthJL  
RthJA  
RthJA  
RthJA  
Tj  
50  
25  
A
K/W  
K/W  
K/W  
K/W  
°C  
Mounted on epoxy-glass hard tissue,fig. 1b  
Mounted on epoxy-glass hard tissue, fig. 1b  
Mounted on Al-oxid-ceramic (Al2O3), fig. 1b  
150  
Junction to ambient air  
125  
100  
Junction temperature  
150  
Storage temperature range  
Forward voltage (max.)  
Tstg  
VF  
- 65 to + 150  
1.2  
°C  
IF = 0.5 A  
V
Rev. 2.4, 29-Nov-11  
Document Number: 85594  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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