Datasheet > BZD27C3V9P-G1

BZD27C3V9P-G1

更新时间： 2024-11-11 03:15:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	171K
描述
DIODE 3.9 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Voltage Regulator Diode

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中文翻译

获取价格

数据手册

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BZD27C3V9P-G1 数据手册

BZD27C3V6P to BZD27C200P

VISHAY

Vishay Semiconductors

Voltage Regulator Diodes

Features

• Sillicon Planar Zener Diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering:

260 °C/10 sec. at terminals

Mechanical Data

Case: JEDEC DO-219AB (SMF^®) Plastic Case

Packaging codes/options:

G1/ 10 K per 13 " reel, (8 mm tape), 50 K/box

G2/ 3 K per 7 " reel, (8 mm tape), 30 K/box

Weight: approx. 10 mg

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

amb

Test condition

Symbol

Value

2.3

Unit

Power dissipation

T = 80 °C

tot

T = 25 °C

0.8

Non-repetitive peak pulse power

dissipation

300

ZSM

100 µs square pulse

10/1000 µs waveform (BZD27-

C7V5P to BZD27-C100P)

150

RSM

10/1000 µs waveform (BZD27-

C110P to BZD27-C200P)

100

RSM

Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

T = 25 °C prior to surge

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

180

Unit

K/W

Thermal resistance junction to ambient air

Thermal resistance junction to lead

θ JA

150

K/W

°C

θ JL

Maximum junction temperature

Storage temperature range

- 55 to + 150

°C

Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Min

Typ.

Max

1.2

Unit

Forward voltage

I = 0.2 A

Document Number 85810

Rev. 4, 16-Sep-03

www.vishay.com

12 3 4 5 6

中文翻译

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