Datasheet > BZD27C3V9

BZD27C3V9

更新时间： 2024-01-11 04:31:29

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	44K
描述
DIODE 3.9 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

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技术参数
数据手册

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BZD27C3V9 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.7
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BZD27C3V9 数据手册

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

REVERSE

BREAKDOWN

VOLTAGE

TEST

CURREN

TEMPERATURE

COEFFICIENT

CLAMPING

VOLTAGE

TYPE

NUMBER

V_(BR)R(V)

at I_test

at I_RSM

(A)

note 1

S_Z(%/K) at I_test

V_(CL)R(V)

MAX.

I_R(µA)

I_test

(mA)

at V_R

(V)

MIN.

MAX.

168

188

208

228

251

280

310

340

370

400

440

480

0.09

0.13

249

276

305

336

380

419

459

498

537

603

655

707

0.60

0.54

0.50

0.45

0.40

0.36

0.33

0.30

0.28

0.25

0.23

0.21

150

160

180

200

220

240

270

300

330

360

390

430

BZD27-C180

BZD27-C200

BZD27-C220

BZD27-C240

BZD27-C270

BZD27-C300

BZD27-C330

BZD27-C360

BZD27-C390

BZD27-C430

BZD27-C470

BZD27-C510

Note

1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-tp}

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to tie-point

BZD27-C3V6 to -C6V8

K/W

BZD27-C7V5 to -C510

R_{th j-a}

thermal resistance from junction to ambient

BZD27-C3V6 to -C6V8

note 1

175

150

K/W

BZD27-C7V5 to -C510

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.

For more information please refer to the “General Part of associated Handbook”.

1996 Jun 10

1...3 4 567 8 9

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