Datasheet > BZD27-C3V9

BZD27-C3V9

更新时间： 2024-01-02 11:31:11

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
4页	113K
描述
Zener Diode,

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技术参数
数据手册

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BZD27-C3V9 技术参数

是否无铅：	不含铅	生命周期：	Transferred
零件包装代码：	DO-219AB	包装说明：	R-PDSO-F2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.34	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-219AA	JESD-30 代码：	R-PDSO-F2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	0.8 W	认证状态：	Not Qualified
标称参考电压：	3.9 V	表面贴装：	YES
技术：	ZENER	端子形式：	FLAT
端子位置：	DUAL	最大电压容差：	5.13%
工作测试电流：	100 mA	Base Number Matches：	1

BZD27-C3V9 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

VOLTAGE REGULATOR DIODES

BZD27 Series

MELF (Plastic)

FEATURES :

* High maximum operating temperature

Cathode Mark

* Low leakage current

φ 0.102 (2.6)

0.094 (2.4)

* Excellent stability

* Zener working voltage range: 3.6 to 270 V for 46 types

* Transient suppressor stand-off voltage range:

6.2 to 430 V for 45 types

0.022(0.55)

0.205(5.2)

0.189(4.8)

* Pb / RoHS Free

MECHANICAL DATA :

* Case : Molded plastic

Dimensions in inches and ( millimeters )

* Terminals : Plated Terminals, solderable per

MIL-STD-750 Method 2026

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.116 gram

MAXIMUM RATINGS

Parameter

Total Power dissipation

Symbol

Condition

Min.

Max.

Unit

Ttp = 105 °C; see Fog. 1 and 2

P_tot

1.7

2.3

BZD27-C3V6 to BZD27-C6V8

BZD27-C7V5 to BZD27-C510

Total Power dissipation

PCB mounted

P_tot

0.8

BZD27-C3V6 to BZD27-C6V8

BZD27-C7V5 to BZD27-C510

Non-repetitive peak reverse

power dissipation

Tamb = 60 °C, see Fig. 1

Tamb = 55 °C, see Fig. 2

tp = 100 µs; square pulse;

Tj = 25°C prior to surge; see Fig. 5

10/1000 µs exponential pulse (see Fig. 5)

Tj = 25°C prior to surge

P_ZSM

300

Non-repetitive peak reverse power

dissipation (BZD27-C7V5 to -C510)

Forward voltage

P_RSM

V_F

150

1.2

I_F= 0.2 A; Tj = 25 °C; see Fig. 3

Junction and Storage Temperature Range

BZD27-C3V6 to BZD27-C6V8

BZD27-C7V5 to BZD27-C510

T_J, T_STG

°C

-65

+200

+175

THERMAL CHARACTERISTICS

Symbol

Parameter

Condition

Value

Unit

Thermal resistance from junction to tie-point

BZD27-C3V6 to BZD27-C6V8

R_{th j-tp}

K/W

BZD27-C7V5 to BZD27-C510

Thermal resistance from junction to ambient

BZD27-C3V6 to BZD27-C6V8

R_{th j-a}

K/W

Note 1

175

150

BZD27-C7V5 to BZD27-C510

Note : (1) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥ 40 µm on an must space.

Page 1 of 4

Rev. 01 : November 7, 2006

12 3 4

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