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BZD27-C3V9P/G2 PDF预览

BZD27-C3V9P/G2

更新时间: 2024-01-13 07:18:42
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
5页 112K
描述
Zener Diode, 3.9V V(Z), 5.13%, 0.8W, Silicon, Unidirectional, DO-219AA, PLASTIC, SMF, 2 PIN

BZD27-C3V9P/G2 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:DO-219AB包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.34Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-219AA
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.8 W认证状态:Not Qualified
标称参考电压:3.9 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
最大电压容差:5.13%工作测试电流:100 mA
Base Number Matches:1

BZD27-C3V9P/G2 数据手册

 浏览型号BZD27-C3V9P/G2的Datasheet PDF文件第2页浏览型号BZD27-C3V9P/G2的Datasheet PDF文件第3页浏览型号BZD27-C3V9P/G2的Datasheet PDF文件第4页浏览型号BZD27-C3V9P/G2的Datasheet PDF文件第5页 
BZD27 Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Zener Diodes  
VZ Range 3.6 to 200V  
TVS VWM Range 6.2 to 160V  
Power Dissipation 2.3W  
DO-219AB (SMF)  
Cathode Band  
Top View  
1.8 ± 0.1  
1.0 ± 0.2  
2.8 ± 0.1  
5°  
0.98 ± 0.1  
5°  
Mounting Pad Layout  
0.05 - 0.30  
1.2  
1.6  
Z
1.2  
0.60 ± 0.25  
Detail Z  
enlarged  
Dimensions in millimeters  
0.00 – 0.10  
3.7 ± 0.2  
Mechanical Data  
Features  
Case: JEDEC DO-219 Plastic Case  
Weight: approx. 0.01g  
• Silicon Planar Power Zener Diodes.  
• Low profile surface-mount package.  
• Zener and TVS specification.  
Packaging codes-options:  
G1-10K per 13” reel (8mm tape), 50K/box  
G2-3K per 7” reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation at TL = 105°C  
Power Dissipation at TA = 25°C  
Ptot  
2.3  
W
W
Ptot  
0.8(1)  
Non-repetitive peak pulse power dissipation  
PZSM  
PRSM  
300  
150  
W
W
with 100µs square pulse(2)  
Non-repetitive peak pulse power dissipation  
with 10/1000µs waveform (BZ027-C7V5 to -C200)(2)  
Thermal Resistance Junction to Ambient Air(1)  
Thermal Resistance Junction to Lead  
Maximum Junction Temperature  
RθJA  
RθJL  
Tj  
188  
30  
°C/W  
°C/W  
°C  
175  
Storage Temperature Range  
TS  
–65 to +175  
°C  
Notes: (1) Mounted on epoxy-glass PCB with 3 x 3mm Cu pads (40µm thick)  
(2) TJ = 25°C prior to surge  
Document Number 88311  
06-May-02  
www.vishay.com  
1

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