BZD27C3V6P-M

更新时间： 2024-01-13 19:54:11

品牌	Logo	应用领域
威世 - VISHAY		稳压二极管齐纳二极管测试光电二极管
页数	文件大小	规格书
7页	112K
描述
Zener Diodes with Surge Current Specification

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技术参数
数据手册

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BZD27C3V6P-M 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.7
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BZD27C3V6P-M 数据手册

BZD27C3V6P-M to BZD27C200P-M

www.vishay.com

Vishay Semiconductors

BASIC CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

160

140

120

100

Max. V_F

Typ. V_F

0.1

0.6

0.8

1.0

1.2

1.4

1.6

100

150

200

17411

17414

V_F- Forward Voltage (V)

V_Znom- Zener Voltage (V)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage

10 000

I_RSM

(%)

C5V1P

C18P

C6V8P

C12P

t₁= 10 µs

t₂= 1000 µs

100

1000

100

C27P

C51P

C200P

0.5

t₁

1.0

1.5

2.0

2.5

3.0

t₂

17415

17412

V_R- Reverse Voltage (V)

Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage

Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition

3.0

Tie point temperature

2.5

2.0

1.5

1.0

0.5

Ambient temperature

100 125 150

17413

T_amb- Ambient Temperature (°C)

Fig. 3 - Power Dissipation vs. Ambient Temperature

Rev. 1.2, 29-Nov-11

Document Number: 83307

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 345 6 7

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