Datasheet > BZD27C100P-G1

BZD27C100P-G1

更新时间： 2024-11-05 04:06:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	112K
描述
DIODE 100 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Voltage Regulator Diode

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数据手册

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BZD27C100P-G1 数据手册

BZD27 Series

New Product

Vishay Semiconductors

formerly General Semiconductor

Zener Diodes

V_ZRange 3.6 to 200V

TVS V_WMRange 6.2 to 160V

Power Dissipation 2.3W

DO-219AB (SMF)

Cathode Band

Top View

1.8 ± 0.1

1.0 ± 0.2

2.8 ± 0.1

5°

0.98 ± 0.1

5°

Mounting Pad Layout

0.05 - 0.30

1.2

1.6

1.2

0.60 ± 0.25

Detail Z

enlarged

Dimensions in millimeters

0.00 – 0.10

3.7 ± 0.2

Mechanical Data

Features

Case: JEDEC DO-219 Plastic Case

Weight: approx. 0.01g

• Silicon Planar Power Zener Diodes.

• Low profile surface-mount package.

• Zener and TVS specification.

Packaging codes-options:

G1-10K per 13” reel (8mm tape), 50K/box

G2-3K per 7” reel (8mm tape), 30K/box

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Power Dissipation at T_L= 105°C

Power Dissipation at T_A= 25°C

P_tot

2.3

P_tot

0.8⁽¹⁾

Non-repetitive peak pulse power dissipation

P_ZSM

P_RSM

300

150

with 100µs square pulse⁽²⁾

Non-repetitive peak pulse power dissipation

with 10/1000µs waveform (BZ027-C7V5 to -C200)⁽²⁾

Thermal Resistance Junction to Ambient Air⁽¹⁾

Thermal Resistance Junction to Lead

Maximum Junction Temperature

R_θJA

R_θJL

T_j

188

°C/W

°C

175

Storage Temperature Range

T_S

–65 to +175

°C

Notes: (1) Mounted on epoxy-glass PCB with 3 x 3mm Cu pads (≥ 40µm thick)

(2) T_J= 25°C prior to surge

Document Number 88311

06-May-02

www.vishay.com

12 3 4 5

中文翻译

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