Datasheet > BZD27B5V1P-HE3-18

BZD27B5V1P-HE3-18

更新时间： 2024-11-19 22:56:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	117K
描述
DIODE ZENER 5.1V 0.8W DO-219AB

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BZD27B Series

Vishay Semiconductors

www.vishay.com

Zener Diodes with Surge Current Specification

FEATURES

eSMP^®Series

• Sillicon planar Zener diodes

• Voltage range includes 43 breakdown

voltages from 3.6 V to 200 V with 2 %

for BZD27B Series

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

Available

23018

• Excellent stability

23019

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Meets JESD 201 class 2 whisker test

• ESD capability according to AEC-Q101:

human body model: > 8 kV

SMF (DO-219AB)

LINKS TO ADDITIONAL RESOURCES

3D Models

machine model: > 800 V

PRIMARY CHARACTERISTICS

• Wave and reflow solderable

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, and commercial grade

PARAMETER

V_Zrange nom.

Test current I_ZT

V_BR

VALUE

3.6 to 200

5 to 100

UNIT

•

Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified

7.35 to 196

6.2 to 160

150

• Compatible to SOD-123W package case outline or

SOD-123F and SOD-123FL

V_WM

P_PPM

°C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

T_Jmax.

175

V_Zspecification

Circuit configuration

Polarity

Pulse current

Single

Uni-directional

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZD27B3V6P-E3-08 to BZD27B200P-E3-08

BZD27B3V6P-HE3-08 to BZD27B200P-HE3-08

BZD27B3V6P-E3-18 to BZD27B200P-E3-18

BZD27B3V6P-HE3-18 to BZD27B200P-HE3-18

3000 per 7" reel (8 mm tape)

MOQ = 30K

BZD27B Series

10 000 per 13" reel (8 mm tape)

MOQ = 50K

PACKAGE

MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST

PACKAGE NAME WEIGHT

SOLDERING CONDITIONS

FLAMMABILITY RATING

LEVEL

ACC. JESD 201

MSL level 1

(according J-STD-020)

SMF (DO-219AB)

15 mg

UL 94 V-0

Class 2

Peak temperature max. 260 °C

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

2300

800

UNIT

T_L= 105 °C

T_A= 30 °C ⁽¹⁾

P_tot

Power dissipation

P_tot

100 μs square pulse

10/1000 μs waveform

P_ZSM

P_RSM

R_thJL

300

Non repetitive peak surge power dissipation ⁽²⁾

150

Junction to lead

K/W

Mounted on epoxy-glass PCB with

3 mm x 3 mm Cu pads (≥ 40 μm thick)

Junction to ambient air

R_thJA

180

K/W

Junction temperature

T_j

175

°C

Storage temperature range

Operating temperature range

T_stg

T_op

-65 to +175

Notes

(1)

(2)

Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick)

T_J= 25 °C prior to surge

Rev. 2.0, 26-Feb-2021

Document Number: 85921

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与BZD27B5V1P-HE3-18相关器件

型号	品牌	获取价格	描述	数据表
BZD27B5V1P-M	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZD27B5V1P-M3-08	VISHAY	获取价格	DIODE ZENER 5.1V 0.8W DO-219AB
BZD27B5V1P-M3-18	VISHAY	获取价格	DIODE ZENER 5.1V 0.8W DO-219AB
BZD27B5V6P	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZD27B5V6P-E3-08	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-E3-18	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-HE3-08	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-HE3-18	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-M	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZD27B5V6P-M3-08	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB

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