Datasheet > BZD27B5V1P-M

BZD27B5V1P-M

更新时间： 2024-11-20 00:35:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	118K
描述
Zener Diodes with Surge Current Specification

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZD27B5V1P-M 数据手册

BZD27B-M Series

Vishay Semiconductors

www.vishay.com

Zener Diodes with Surge Current Specification

FEATURES

Available

• Sillicon planar Zener diodes

• Voltage range includes 43 breakdown

voltages from 3.6 V to 200 V with 2 %

for BZD27B-M Series

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

17249

• Excellent stability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

PRIMARY CHARACTERISTICS

• Meets JESD 201 class 2 whisker test

PARAMETER

V_Zrange nom.

Test current I_ZT

V_BR

VALUE

3.6 to 200

5 to 100

UNIT

• ESD capability according to AEC-Q101:

human body model: > 8 kV

machine model: > 800 V

7.35 to 196

6.2 to 160

150

• Wave and reflow solderable

• AEC-Q101 qualified

V_WM

P_PPM

• Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

T_Jmax.

175

°C

V_Zspecification

Int. construction

Polarity

Pulse current

Single

• Base P/N-HM3 - halogen-free, RoHS-compliant, and

automotive grade (available on request)

Uni-directional

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

3000 per 7" reel (8mm tape)

10 000 per 13" reel (8 mm tape)

MINIMUM ORDER QUANTITY

30 000/box

BZD27B3V6P-M3-08 to BZD27B200P-M3-08

BZD27B3V6P-M3-18 to BZD27B200P-M3-18

BZD27B-M Series

50 000/box

PACKAGE

MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST

PACKAGE NAME WEIGHT

SOLDERING CONDITIONS

FLAMMABILITY RATING

LEVEL

ACC. JESD 201

MSL level 1

(according J-STD-020)

DO-219AB (SMF)

15 mg

UL 94 V-0

Class 2

Peak temperature max. 260 °C

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

P_tot

VALUE

2300

800

UNIT

T_L= 105 °C

Power dissipation

_A= 30 °C ⁽¹⁾

P_tot

100 μs square pulse

10/1000 μs waveform

P_ZSM

P_RSM

R_thJL

300

Non repetitive peak surge power dissipation ⁽²⁾

150

Junction to lead

K/W

Mounted on epoxy-glass PCB with

3 mm x 3 mm Cu pads ( 40 μm thick)

Junction to ambient air

R_thJA

180

K/W

Junction temperature

T_j

175

°C

Storage temperature range

Operating temperature range

T_stg

T_op

-65 to +175

Notes

(1)

Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)

T_J= 25 °C prior to surge

(2)

Rev. 1.0., 29-Oct-15

Document Number: 85922

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与BZD27B5V1P-M相关器件

型号	品牌	获取价格	描述	数据表
BZD27B5V1P-M3-08	VISHAY	获取价格	DIODE ZENER 5.1V 0.8W DO-219AB
BZD27B5V1P-M3-18	VISHAY	获取价格	DIODE ZENER 5.1V 0.8W DO-219AB
BZD27B5V6P	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZD27B5V6P-E3-08	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-E3-18	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-HE3-08	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-HE3-18	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-M	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZD27B5V6P-M3-08	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB
BZD27B5V6P-M3-18	VISHAY	获取价格	DIODE ZENER 5.6V 0.8W DO-219AB

与BZD27B5V1P-M相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

44

产品中心

服务支持

精选活动

关于我们

帮助中心

BZD27B5V1P-M

BZD27B5V1P-M 数据手册

与BZD27B5V1P-M相关器件

与BZD27B5V1P-M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZD27B5V1P-M

BZD27B5V1P-M 数据手册

与BZD27B5V1P-M相关器件

与BZD27B5V1P-M相关文章

您还可以找

您在本页遇到什么问题？