生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.8 | Is Samacsys: | N |
最大击穿电压: | 35 V | 最小击穿电压: | 31 V |
击穿电压标称值: | 33 V | 外壳连接: | ISOLATED |
最大钳位电压: | 46.2 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
最大动态阻抗: | 15 Ω | JESD-30 代码: | O-LALF-W2 |
最大非重复峰值反向功率耗散: | 300 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 2.5 W | 认证状态: | Not Qualified |
标称参考电压: | 33 V | 最大反向电流: | 5 µA |
子类别: | Voltage Reference Diodes | 表面贴装: | NO |
技术: | AVALANCHE | 端子形式: | WIRE |
端子位置: | AXIAL | 最大电压容差: | 5% |
工作测试电流: | 25 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BZD23C33T/R | PHILIPS |
获取价格 |
Zener Diode, 33V V(Z), 5%, 2.5W, | |
BZD23-C33T/R | NXP |
获取价格 |
DIODE 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor | |
BZD23C36 | NXP |
获取价格 |
DIODE 36 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode | |
BZD23-C36 | NXP |
获取价格 |
Voltage regulator diodes | |
BZD23C360 | NXP |
获取价格 |
DIODE 360 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode | |
BZD23-C360 | NXP |
获取价格 |
Voltage regulator diodes | |
BZD23C360AMO | PHILIPS |
获取价格 |
Trans Voltage Suppressor Diode, 360V V(RWM), Unidirectional, | |
BZD23-C360AMO | NXP |
获取价格 |
暂无描述 | |
BZD23-C36AMO | NXP |
获取价格 |
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor | |
BZD23C39 | NXP |
获取价格 |
DIODE 39 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode |