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BYZ50A47R PDF预览

BYZ50A47R

更新时间: 2024-02-26 02:01:49
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 165K
描述

BYZ50A47R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, METAL, PRESSFIT-1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
最大击穿电压:51.7 V最小击穿电压:42.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-MUPF-P1
湿度敏感等级:1元件数量:1
端子数量:1最高工作温度:215 °C
最低工作温度:-50 °C封装主体材料:METAL
封装形状:ROUND封装形式:PRESS FIT
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子形式:PIN/PEG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BYZ50A47R 数据手册

 浏览型号BYZ50A47R的Datasheet PDF文件第2页 
BYZ 50A22 ... BYZ 50A47  
BYZ 50K22 ... BYZ 50K47  
Silicon Protectifiers  
Silizium Schutzgleichrichter  
mit Begrenzereigenschaften  
Hochtemperaturdioden  
with TVS characteristics  
High-temperature diodes  
Ø 12.75  
Ø 11 ±0.1  
Nominal current – Nennstrom  
50 A  
Nominal breakdown voltage  
Nominale Abbruch-Spannung  
19.8 ... 51.7 V  
Metal press-fit case with plastic cover  
1.3  
Metall-Einpreßgehäuse mit Plastik-Abdeckung  
Weight approx. – Gewicht ca.  
10 g  
Casting compound has UL classification 94V-0  
Vergußmasse UL94V-0 klassifiziert  
Ø 13±01  
Standard packaging: bulk  
Standard Lieferform: lose im Karton  
Dimensions / Maße in mm  
Maximum ratings  
Grenzwerte  
Type / Typ  
Breakdown voltage  
Abbruch-Spannung  
IT = 100 mA  
Reverse voltage  
Sperrspannung  
IR = 5 A  
Max. clamping voltage  
Max. Begrenzerspanng.  
at / bei IPP, tp = 1m s  
Wire to / Draht an  
Anode  
Cathode  
VBRmin [V] VBRmax  
VR [V]  
VC [V]  
31,9  
39,1  
47,7  
56,4  
67,8  
IPP [A]  
242  
BYZ 50A22  
BYZ 50A27  
BYZ 50A33  
BYZ 50A39  
BYZ 50A47  
BYZ 50K22  
BYZ 50K27  
BYZ 50K33  
BYZ 50K39  
BYZ 50K47  
19.8  
24.3  
29.7  
35.1  
42.3  
24.2  
29.7  
36.3  
42.9  
51.7  
> 17.8  
> 21.8  
> 26.8  
> 31.6  
> 38.1  
192  
160  
134  
112  
Max. average forward rectified current, R-load  
TC = 150C  
TA = 25C  
IFAV  
50 A  
Dauergrenzstrom in Einwegschaltung mit R-Last  
Peak forward surge current, 50 / 60 Hz half sine-wave  
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle  
IFSM  
400 / 450 A  
Rating for fusing – Grenzlastintegral, t <10 ms  
TA = 25C  
i2t  
VF  
Tj  
800 A2s  
< 1.1 V  
Forward voltage – Durchlaßspannung  
Tj = 25C  
IF = 50 A  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
– 50…+215C  
TS – 50…+215C  
1
04.09.2002  

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