Datasheet > BYWB29-200-HE3/45

BYWB29-200-HE3/45

更新时间： 2024-11-17 03:22:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	128K
描述
DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BYWB29-200-HE3/45 数据手册

浏览型号BYWB29-200-HE3/45的Datasheet PDF文件第2页

浏览型号BYWB29-200-HE3/45的Datasheet PDF文件第3页

浏览型号BYWB29-200-HE3/45的Datasheet PDF文件第4页

浏览型号BYWB29-200-HE3/45的Datasheet PDF文件第5页

BYW(F,B)29-50 thru BYW(F,B)29-200

Vishay General Semiconductor

Ultrafast Rectifier

FEATURES

ITO-220AC

TO-220AC

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

BYW29 Series

BYWF29 Series

PIN 1

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

PIN 1

CASE

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

BYWB29 Series

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

I_F(AV)

8.0 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

V_RRM

I_FSM

t_rr

50 V to 200 V

100 A

25 ns

V_F

0.8 V

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

V_DC

BYW29-50 BYW29-100 BYW29-150 BYW29-200 UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 105 °C

100

I_F(AV)

8.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

T_J, T_STG

V_AC

100

°C

Operating and storage temperature range

- 65 to + 150

1500

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

Document Number: 88560

Revision: 07-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与BYWB29-200-HE3/45相关器件

型号	品牌	获取价格	描述	数据表
BYWB29-200HE3/81	VISHAY	获取价格	Ultrafast Rectifier
BYWB29-200-HE3/81	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
BYWB29-50	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
BYWB29-50/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
BYWB29-50/81	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
BYWB29-50-E3/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PL
BYWB29-50-E3/45	VISHAY	获取价格	DIODE GEN PURP 50V 8A TO263AB
BYWB29-50-E3/81	VISHAY	获取价格	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re
BYWB29-50HE3/45	VISHAY	获取价格	DIODE GEN PURP 50V 8A TO263AB
BYWB29-50-HE3/45	VISHAY	获取价格	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re

与BYWB29-200-HE3/45相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

BYWB29-200-HE3/45

BYWB29-200-HE3/45 数据手册

与BYWB29-200-HE3/45相关器件

与BYWB29-200-HE3/45相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BYWB29-200-HE3/45

BYWB29-200-HE3/45 数据手册

与BYWB29-200-HE3/45相关器件

与BYWB29-200-HE3/45相关文章

您还可以找

您在本页遇到什么问题？