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BYWB29-100-HE3/45 PDF预览

BYWB29-100-HE3/45

更新时间： 2024-11-16 14:41:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 128K
描述
DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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BYWB29-100-HE3/45 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：D2PAK
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3针数：3
Reach Compliance Code：unknown风险等级：5.7
Is Samacsys：NBase Number Matches：1

BYWB29-100-HE3/45 数据手册

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BYW(F,B)29-50 thru BYW(F,B)29-200  
Vishay General Semiconductor  
Ultrafast Rectifier  
FEATURES  
ITO-220AC  
TO-220AC  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
2
2
1
1
BYW29 Series  
BYWF29 Series  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
PIN 1  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
TYPICAL APPLICATIONS  
2
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
1
BYWB29 Series  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
8.0 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
trr  
50 V to 200 V  
100 A  
25 ns  
VF  
0.8 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRMS  
VDC  
BYW29-50 BYW29-100 BYW29-150 BYW29-200 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 105 °C  
100  
IF(AV)  
8.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
TJ, TSTG  
VAC  
100  
A
°C  
V
Operating and storage temperature range  
- 65 to + 150  
1500  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
Document Number: 88560  
Revision: 07-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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与BYWB29-100-HE3/45相关器件

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BYWB29-100-HE3/81 VISHAY

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BYWB29-150 VISHAY

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BYWB29-150/31 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
BYWB29-150/81 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
BYWB29-150-E3/31 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, P
BYWB29-150-E3/45 VISHAY

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 		DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
BYWB29-150-E3/81 VISHAY

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 		DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
BYWB29-150HE3/45 VISHAY

获取价格

 		DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
BYWB29-150-HE3/45 VISHAY

获取价格

 		DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
BYWB29-150-HE3/81 VISHAY

获取价格

 		DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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